Self-protected LDMOS output device with embedded SCR to improve ESD robustness in 0.25-μm 60-V BCD process

Yu Ching Huang, Chia Tsen Dai, Ming-Dou Ker

    研究成果: Paper同行評審

    22 引文 斯高帕斯(Scopus)

    摘要

    For high-voltage output driver, the lateral DMOS (LDMOS) is often used for both output function operation and self-protection against electrostatic discharge (ESD) events. In this work, a new structure of LDMOS output device with embedded SCR has been proposed and verified in a 0.25-μm 60-V BCD process. This new structure, with additional p+ and n+ implantation regions added between the drain contact and poly-gate of LDMOS, can keep it stably in the high-current holding region after snapback. By using this structure, the LDMOS can provide high enough self-protected ESD robustness for applications in the high-voltage output drivers.

    原文English
    頁面116-119
    頁數4
    DOIs
    出版狀態Published - 27 5月 2013
    事件2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
    持續時間: 25 2月 201326 2月 2013

    Conference

    Conference2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
    國家/地區Taiwan
    城市Kaohsiung
    期間25/02/1326/02/13

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