For high-voltage output driver, the lateral DMOS (LDMOS) is often used for both output function operation and self-protection against electrostatic discharge (ESD) events. In this work, a new structure of LDMOS output device with embedded SCR has been proposed and verified in a 0.25-μm 60-V BCD process. This new structure, with additional p+ and n+ implantation regions added between the drain contact and poly-gate of LDMOS, can keep it stably in the high-current holding region after snapback. By using this structure, the LDMOS can provide high enough self-protected ESD robustness for applications in the high-voltage output drivers.
|出版狀態||Published - 27 5月 2013|
|事件||2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan|
持續時間: 25 2月 2013 → 26 2月 2013
|Conference||2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013|
|期間||25/02/13 → 26/02/13|