Self-organized Pairs of Ge Double Quantum Dots with Tunable Sizes and Spacings Enable Room-Temperature Operation of Qubit and Single-Electron Devices

Kang Ping Peng, Ching Lun Chen, Ying Tsan Tang, David Kuo, Thomas George, Horng-Chih Lin, Pei-Wen Li*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

We report the first-of-its-kind, paired Ge double quantum dots (DQDs) using spacer technology in combination with selective oxidation of Si0 85Ge0 15 in a self-organization approach. Process-controlled tunability of the spherical Ge QD diameters (5-20nm) and inter-QD spacings as close as 12nm were achieved by thermal oxidation of poly-SiGe spacer islands at each sidewall corner of Si3N4/poly-Si ridges. Based on the capability of producing highly-symmetrical Ge DQDs in terms of QD sizes and the coupling barriers of thermal SiO2/densified Si3N4 between the QDs and proximal electrodes, we demonstrated room-temperature operation of Ge qubit devices, within which one QD encodes charges and the other QD-single-electron transistor (SET) senses and read-out the qubit. Theoretical analysis on the size-tunable density of states for Ge QDs and the tunneling paths in DQDs were conducted. Our Ge DQD system enables a practically achievable building block for QD qubit devices on Si platform.

原文English
主出版物標題2019 IEEE International Electron Devices Meeting, IEDM 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁數4
ISBN(電子)9781728140315
DOIs
出版狀態Published - 十二月 2019
事件65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
持續時間: 7 十二月 201911 十二月 2019

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2019-December
ISSN(列印)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
國家/地區United States
城市San Francisco
期間7/12/1911/12/19

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