Self-heating enhanced impact ionization in SOI MOSFETs

Pin Su; K. Goto; T. Sugii; Chen-Ming Hu

doi:10.1109/SOIC.2001.957970

Self-heating enhanced impact ionization in SOI MOSFETs

Pin Su^*, K. Goto, T. Sugii, Chen-Ming Hu

^*此作品的通信作者

研究成果: Paper › 同行評審

14 引文斯高帕斯（Scopus）

摘要

A self-heating enhanced impact-ionization phenomenon in SOI MOSFETs was analyzed. The self-heating effect provides carrier heating which determines impact ionization. Co-processed bulk and PD SOI MOSFETs were investigated using 0.13 μm technology. More impact ionization current was induced for the SOI transistor at high gate DC bias under low supply drain voltages.

原文	English
頁面	31-32
頁數	2
DOIs	https://doi.org/10.1109/SOIC.2001.957970
出版狀態	Published - 10月 2001
事件	2001 IEEE International SOI Conference - Durango, CO, 美國持續時間: 1 10月 2001 → 4 10月 2001

Conference

Conference	2001 IEEE International SOI Conference
國家/地區	美國
城市	Durango, CO
期間	1/10/01 → 4/10/01

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10.1109/SOIC.2001.957970

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title = "Self-heating enhanced impact ionization in SOI MOSFETs",

abstract = "A self-heating enhanced impact-ionization phenomenon in SOI MOSFETs was analyzed. The self-heating effect provides carrier heating which determines impact ionization. Co-processed bulk and PD SOI MOSFETs were investigated using 0.13 μm technology. More impact ionization current was induced for the SOI transistor at high gate DC bias under low supply drain voltages.",

author = "Pin Su and K. Goto and T. Sugii and Chen-Ming Hu",

year = "2001",

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doi = "10.1109/SOIC.2001.957970",

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AU - Su, Pin

AU - Goto, K.

AU - Sugii, T.

AU - Hu, Chen-Ming

PY - 2001/10

Y1 - 2001/10

N2 - A self-heating enhanced impact-ionization phenomenon in SOI MOSFETs was analyzed. The self-heating effect provides carrier heating which determines impact ionization. Co-processed bulk and PD SOI MOSFETs were investigated using 0.13 μm technology. More impact ionization current was induced for the SOI transistor at high gate DC bias under low supply drain voltages.

AB - A self-heating enhanced impact-ionization phenomenon in SOI MOSFETs was analyzed. The self-heating effect provides carrier heating which determines impact ionization. Co-processed bulk and PD SOI MOSFETs were investigated using 0.13 μm technology. More impact ionization current was induced for the SOI transistor at high gate DC bias under low supply drain voltages.

UR - http://www.scopus.com/inward/record.url?scp=0035159829&partnerID=8YFLogxK

U2 - 10.1109/SOIC.2001.957970

DO - 10.1109/SOIC.2001.957970

M3 - Paper

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SP - 31

EP - 32

T2 - 2001 IEEE International SOI Conference

Y2 - 1 October 2001 through 4 October 2001

ER -

Self-heating enhanced impact ionization in SOI MOSFETs

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