Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate

Shih Chin Kao; Hsiao-Wen Zan; Jung Jie Huang; Bo Cheng Kung

Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate

Shih Chin Kao^*, Hsiao-Wen Zan, Jung Jie Huang, Bo Cheng Kung

^*此作品的通信作者

光電工程學系

研究成果: Paper › 同行評審

摘要

a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10^-13 A while the field-effect mobility is 0.42 cm² V ^-1s^-1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.

原文	English
出版狀態	Published - 2009
事件	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, 台灣持續時間: 27 4月 2009 → 30 4月 2009

Conference

Conference	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
國家/地區	台灣
城市	Taipei
期間	27/04/09 → 30/04/09

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引用此

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title = "Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate",

abstract = "a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10-13 A while the field-effect mobility is 0.42 cm2 V -1s-1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.",

keywords = "A-Si: H TFT, Flexible, Reliability, Self-heating",

author = "Kao, {Shih Chin} and Hsiao-Wen Zan and Huang, {Jung Jie} and Kung, {Bo Cheng}",

year = "2009",

language = "English",

note = "2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 ; Conference date: 27-04-2009 Through 30-04-2009",

}

TY - CONF

T1 - Self heating effect on reliability for low-temperature a-Si

T2 - 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009

AU - Kao, Shih Chin

AU - Zan, Hsiao-Wen

AU - Huang, Jung Jie

AU - Kung, Bo Cheng

PY - 2009

Y1 - 2009

N2 - a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10-13 A while the field-effect mobility is 0.42 cm2 V -1s-1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.

AB - a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10-13 A while the field-effect mobility is 0.42 cm2 V -1s-1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.

KW - A-Si: H TFT

KW - Flexible

KW - Reliability

KW - Self-heating

UR - http://www.scopus.com/inward/record.url?scp=79952058837&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79952058837

Y2 - 27 April 2009 through 30 April 2009

ER -

Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate

摘要

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