Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate

Shih Chin Kao*, Hsiao-Wen Zan, Jung Jie Huang, Bo Cheng Kung

*此作品的通信作者

研究成果: Paper同行評審

摘要

a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10-13 A while the field-effect mobility is 0.42 cm2 V -1s-1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.

原文English
出版狀態Published - 2009
事件2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan
持續時間: 27 4月 200930 4月 2009

Conference

Conference2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
國家/地區Taiwan
城市Taipei
期間27/04/0930/04/09

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