Self-heating effect on bias-stressed reliability for low-temperature a-Si:H TFT on flexible substrate

Shih Chin Kao*, Hsiao-Wen Zan, Jung Jie Huang, Bo Cheng Kung

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Hydrogenated amorphous silicon thin-film transistors on colorless polyimide substrates were successfully fabricated at a low process temperature (160 °C). The gate leakage current is as low as 1013A, while the field-effect mobility is 0.42 cm2V -1 s-1, and the subthreshold swing is 0.77 V/dec. Using bias-temperature stress on devices with different channel widths, the enhancement of self-heating effect on bias-stressed reliability is investigated for the first time. Elevated temperature due to self-heating effect is estimated either by extending the bias-stressed model or by modifying the thermal equivalent circuit model. Degradation of device reliability on a bent substrate is also significant when self-heating effect is incorporated.

原文English
文章編號5393049
頁(從 - 到)588-593
頁數6
期刊IEEE Transactions on Electron Devices
57
發行號3
DOIs
出版狀態Published - 1 3月 2010

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