Self-heating characterization for SOI MOSFET based on AC output conductance

Wei Jin; Samuel K.H. Fung; Weidong Liu; Philip C.H. Chan; Chen-Ming Hu

doi:10.1109/IEDM.1999.823873

Self-heating characterization for SOI MOSFET based on AC output conductance

Wei Jin^*, Samuel K.H. Fung, Weidong Liu, Philip C.H. Chan, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

59 引文斯高帕斯（Scopus）

摘要

A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R _th ) and thermal capacitance (C _th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

原文	English
頁（從 - 到）	175-178
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1999.823873
出版狀態	Published - 1 12月 1999
事件	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 持續時間: 5 12月 1999 → 8 12月 1999

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10.1109/IEDM.1999.823873

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title = "Self-heating characterization for SOI MOSFET based on AC output conductance",

abstract = " A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R th ) and thermal capacitance (C th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling. ",

author = "Wei Jin and Fung, {Samuel K.H.} and Weidong Liu and Chan, {Philip C.H.} and Chen-Ming Hu",

year = "1999",

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doi = "10.1109/IEDM.1999.823873",

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journal = "Technical Digest - International Electron Devices Meeting",

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T1 - Self-heating characterization for SOI MOSFET based on AC output conductance

AU - Jin, Wei

AU - Fung, Samuel K.H.

AU - Liu, Weidong

AU - Chan, Philip C.H.

AU - Hu, Chen-Ming

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R th ) and thermal capacitance (C th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

AB - A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R th ) and thermal capacitance (C th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

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U2 - 10.1109/IEDM.1999.823873

DO - 10.1109/IEDM.1999.823873

M3 - Conference article

AN - SCOPUS:0033314624

SN - 0163-1918

SP - 175

EP - 178

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Self-heating characterization for SOI MOSFET based on AC output conductance

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