Self-assembled Si/SiO2 superlattice in Si-rich oxide films

Chu Yun Hsiao, Chuan Feng Shih*, Kuan Wei Su, Hui Ju Chen, Sheng Wen Fu

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

This work involves as-prepared SiOx (x 2) films that were deposited by reactive sputtering. The regular Si/SiO2 superlattices were self-assembled without post-annealing. The periodicity of Si/SiO 2 superlattices was modulated by varying the oxygen flow rate and was associated with x in SiOx in the range 2-1.3. Si/SiO2 superlattices were formed under compressive stress and the factors that governed the periodicity were discussed.

原文English
文章編號053115
期刊Applied Physics Letters
99
發行號5
DOIs
出版狀態Published - 1 八月 2011

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