摘要
We report a self-assembled InN epitaxial growth on GaN nanorods. Crystalline InN hexagonal structure was selectively grown on the sidewall edges of GaN hexagonal nanorods. The growth mechanism and the photoluminescent property will be discussed.
原文 | English |
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DOIs | |
出版狀態 | Published - 8 6月 2014 |
事件 | 2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, 美國 持續時間: 8 6月 2014 → 13 6月 2014 |
Conference
Conference | 2014 Conference on Lasers and Electro-Optics, CLEO 2014 |
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國家/地區 | 美國 |
城市 | San Jose |
期間 | 8/06/14 → 13/06/14 |