Self-aligned tantalum oxide nanodot arrays through anodic alumina template

Chia Tien Wu; Fu-Hsiang Ko; Hsin Yen Hwang

doi:10.1016/j.mee.2006.01.092

Self-aligned tantalum oxide nanodot arrays through anodic alumina template

Chia Tien Wu
, Fu-Hsiang Ko^*
, Hsin Yen Hwang

^*此作品的通信作者

奈米科技碩博班

研究成果: Article › 同行評審

24 引文斯高帕斯（Scopus）

摘要

A novel strategy for fabricating the ordered nanodot arrays of tantalum oxide with anodic alumina film is proposed to serve the template. Anodic oxidation of Al on TaN film has been performed in oxalic acid and sulfuric acid electrolytes at various applied voltages for porous alumina formation. Anodising reaction proceeds in the sequence of growth of porous anodic alumina when the aluminum layer is consumed up to the underlying TaN, and the growth of tantalum oxide under the bottoms of the alumina pores occurred simultaneously. The nanostructure of the nanodot arrays was studied by scanning electron microscopy, and the chemical composition of nanodots was analyzed by X-ray photoelectron spectroscopy. The nanodots are composed of nonstoichiometric TaO_x. The nanodot diameter demonstrated here ranges between 15 nm and 70 nm and density ranges between 10¹¹/cm² and 10¹⁰/cm².

原文	English
頁（從 - 到）	1567-1570
頁數	4
期刊	Microelectronic Engineering
卷	83
發行號	4-9 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mee.2006.01.092
出版狀態	Published - 4月 2006

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10.1016/j.mee.2006.01.092

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title = "Self-aligned tantalum oxide nanodot arrays through anodic alumina template",

abstract = "A novel strategy for fabricating the ordered nanodot arrays of tantalum oxide with anodic alumina film is proposed to serve the template. Anodic oxidation of Al on TaN film has been performed in oxalic acid and sulfuric acid electrolytes at various applied voltages for porous alumina formation. Anodising reaction proceeds in the sequence of growth of porous anodic alumina when the aluminum layer is consumed up to the underlying TaN, and the growth of tantalum oxide under the bottoms of the alumina pores occurred simultaneously. The nanostructure of the nanodot arrays was studied by scanning electron microscopy, and the chemical composition of nanodots was analyzed by X-ray photoelectron spectroscopy. The nanodots are composed of nonstoichiometric TaOx. The nanodot diameter demonstrated here ranges between 15 nm and 70 nm and density ranges between 1011/cm2 and 1010/cm2.",

keywords = "Nanodot, Porous alumina",

author = "Wu, \{Chia Tien\} and Fu-Hsiang Ko and Hwang, \{Hsin Yen\}",

year = "2006",

month = apr,

doi = "10.1016/j.mee.2006.01.092",

language = "English",

volume = "83",

pages = "1567--1570",

journal = "Microelectronic Engineering",

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TY - JOUR

T1 - Self-aligned tantalum oxide nanodot arrays through anodic alumina template

AU - Wu, Chia Tien

AU - Ko, Fu-Hsiang

AU - Hwang, Hsin Yen

PY - 2006/4

Y1 - 2006/4

N2 - A novel strategy for fabricating the ordered nanodot arrays of tantalum oxide with anodic alumina film is proposed to serve the template. Anodic oxidation of Al on TaN film has been performed in oxalic acid and sulfuric acid electrolytes at various applied voltages for porous alumina formation. Anodising reaction proceeds in the sequence of growth of porous anodic alumina when the aluminum layer is consumed up to the underlying TaN, and the growth of tantalum oxide under the bottoms of the alumina pores occurred simultaneously. The nanostructure of the nanodot arrays was studied by scanning electron microscopy, and the chemical composition of nanodots was analyzed by X-ray photoelectron spectroscopy. The nanodots are composed of nonstoichiometric TaOx. The nanodot diameter demonstrated here ranges between 15 nm and 70 nm and density ranges between 1011/cm2 and 1010/cm2.

AB - A novel strategy for fabricating the ordered nanodot arrays of tantalum oxide with anodic alumina film is proposed to serve the template. Anodic oxidation of Al on TaN film has been performed in oxalic acid and sulfuric acid electrolytes at various applied voltages for porous alumina formation. Anodising reaction proceeds in the sequence of growth of porous anodic alumina when the aluminum layer is consumed up to the underlying TaN, and the growth of tantalum oxide under the bottoms of the alumina pores occurred simultaneously. The nanostructure of the nanodot arrays was studied by scanning electron microscopy, and the chemical composition of nanodots was analyzed by X-ray photoelectron spectroscopy. The nanodots are composed of nonstoichiometric TaOx. The nanodot diameter demonstrated here ranges between 15 nm and 70 nm and density ranges between 1011/cm2 and 1010/cm2.

KW - Nanodot

KW - Porous alumina

UR - https://www.scopus.com/pages/publications/33646063835

U2 - 10.1016/j.mee.2006.01.092

DO - 10.1016/j.mee.2006.01.092

M3 - Article

AN - SCOPUS:33646063835

SN - 0167-9317

VL - 83

SP - 1567

EP - 1570

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4-9 SPEC. ISS.

ER -

Self-aligned tantalum oxide nanodot arrays through anodic alumina template

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