Self-aligned fabrication of thin-film transistors with field-induced drain

C. M. Yu*, Horng-Chih Lin, C. Y. Lin, K. L. Yeh, T. Y. Huang, T. F. Lei

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Thin-film transistor (TFT) devices with either a top or a bottom sub-gate were fabricated and characterized. The top sub-gate scheme allows the self-aligned formation of main-gate with respect to the sub-gate. On the other hand, the bottom sub-gate scheme features a self-aligned field-induced drain with a sidewall spacer located on its top to set the effective field-induction-drain (FID) length. Unlike the conventional TFTs, the FID serves to distribute the high drain electric field and thereby eliminates gate-induced drain leakage-like off-state leakage current. Superior device performance is realized with the bottom sub-gate structure.

原文English
頁(從 - 到)1091-1095
頁數5
期刊Solid-State Electronics
46
發行號8
DOIs
出版狀態Published - 8月 2002

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