Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors

Hsin Yuan Chiu; Tzu Ang Chao; Nathaniel S. Safron; Sheng Kai Su; San Lin Liew; Wei Sheng Yun; Po Sen Mao; Yu Tung Lin; Vincent Duen Huei Hou; Tung Ying Lee; Wen Hao Chang; Matthias Passlack; Hon Sum Philip Wong; Iuliana P. Radu; Han Wang; Gregory Pitner; Chao Hsin Chien

doi:10.1002/aelm.202300519

Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors

Hsin Yuan Chiu, Tzu Ang Chao, Nathaniel S. Safron, Sheng Kai Su, San Lin Liew, Wei Sheng Yun, Po Sen Mao, Yu Tung Lin, Vincent Duen Huei Hou, Tung Ying Lee, Wen Hao Chang, Matthias Passlack, Hon Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner^*, Chao Hsin Chien^*

^*此作品的通信作者

研究成果: Article › 同行評審

摘要

Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (D_CNT) ≥ 1.4 nm) due to the small electronic band gap (E_G) ≤ 0.6 eV and effective mass. This work investigates the on-current and off-current tradeoff for two populations of semiconducting-enriched CNT with D_CNT ≈ 1.0 nm displaying a simultaneous 50x improvement in minimun current (I_MIN) with 2.5x degradation in contact resistance compared to D_CNT ≈ 1.4 nm using a Pd side-bonded contact. A method to enhance the performance of low-leakage CNFETs is demonstrated using sub-monolayer self-aligned contact doping with 0.8 nm of MoO_X, which delivers a 57% reduction in contact resistance to D_CNT ≈ 1.0 nm. Robustness is verified after annealing at 200 °C for 30 min and monitoring stability across 6 months post-fabrication with no change in electrical behaviors.

原文	English
文章編號	2300519
期刊	Advanced Electronic Materials
卷	10
發行號	3
DOIs	https://doi.org/10.1002/aelm.202300519
出版狀態	Published - 3月 2024

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Chiu, H. Y., Chao, T. A., Safron, N. S., Su, S. K., Liew, S. L., Yun, W. S., Mao, P. S., Lin, Y. T., Hou, V. D. H., Lee, T. Y., Chang, W. H., Passlack, M., Wong, H. S. P., Radu, I. P., Wang, H., Pitner, G., & Chien, C. H. (2024). Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors. Advanced Electronic Materials, 10(3), 文章 2300519. https://doi.org/10.1002/aelm.202300519

@article{e756b37966a44a07962cddbdafe25f1c,

title = "Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors",

abstract = "Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due to the small electronic band gap (EG) ≤ 0.6 eV and effective mass. This work investigates the on-current and off-current tradeoff for two populations of semiconducting-enriched CNT with DCNT ≈ 1.0 nm displaying a simultaneous 50x improvement in minimun current (IMIN) with 2.5x degradation in contact resistance compared to DCNT ≈ 1.4 nm using a Pd side-bonded contact. A method to enhance the performance of low-leakage CNFETs is demonstrated using sub-monolayer self-aligned contact doping with 0.8 nm of MoOX, which delivers a 57% reduction in contact resistance to DCNT ≈ 1.0 nm. Robustness is verified after annealing at 200 °C for 30 min and monitoring stability across 6 months post-fabrication with no change in electrical behaviors.",

keywords = "MoO, carbon nanotube, contact resistance, doping, leakage, low-dimensional materials",

author = "Chiu, {Hsin Yuan} and Chao, {Tzu Ang} and Safron, {Nathaniel S.} and Su, {Sheng Kai} and Liew, {San Lin} and Yun, {Wei Sheng} and Mao, {Po Sen} and Lin, {Yu Tung} and Hou, {Vincent Duen Huei} and Lee, {Tung Ying} and Chang, {Wen Hao} and Matthias Passlack and Wong, {Hon Sum Philip} and Radu, {Iuliana P.} and Han Wang and Gregory Pitner and Chien, {Chao Hsin}",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.",

year = "2024",

month = mar,

doi = "10.1002/aelm.202300519",

language = "English",

volume = "10",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "3",

}

Chiu, HY, Chao, TA, Safron, NS, Su, SK, Liew, SL, Yun, WS, Mao, PS, Lin, YT, Hou, VDH, Lee, TY, Chang, WH, Passlack, M, Wong, HSP, Radu, IP, Wang, H, Pitner, G & Chien, CH 2024, 'Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors', Advanced Electronic Materials, 卷 10, 編號 3, 2300519. https://doi.org/10.1002/aelm.202300519

TY - JOUR

T1 - Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors

AU - Chiu, Hsin Yuan

AU - Chao, Tzu Ang

AU - Safron, Nathaniel S.

AU - Su, Sheng Kai

AU - Liew, San Lin

AU - Yun, Wei Sheng

AU - Mao, Po Sen

AU - Lin, Yu Tung

AU - Hou, Vincent Duen Huei

AU - Lee, Tung Ying

AU - Chang, Wen Hao

AU - Passlack, Matthias

AU - Wong, Hon Sum Philip

AU - Radu, Iuliana P.

AU - Wang, Han

AU - Pitner, Gregory

AU - Chien, Chao Hsin

PY - 2024/3

Y1 - 2024/3

N2 - Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due to the small electronic band gap (EG) ≤ 0.6 eV and effective mass. This work investigates the on-current and off-current tradeoff for two populations of semiconducting-enriched CNT with DCNT ≈ 1.0 nm displaying a simultaneous 50x improvement in minimun current (IMIN) with 2.5x degradation in contact resistance compared to DCNT ≈ 1.4 nm using a Pd side-bonded contact. A method to enhance the performance of low-leakage CNFETs is demonstrated using sub-monolayer self-aligned contact doping with 0.8 nm of MoOX, which delivers a 57% reduction in contact resistance to DCNT ≈ 1.0 nm. Robustness is verified after annealing at 200 °C for 30 min and monitoring stability across 6 months post-fabrication with no change in electrical behaviors.

AB - Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due to the small electronic band gap (EG) ≤ 0.6 eV and effective mass. This work investigates the on-current and off-current tradeoff for two populations of semiconducting-enriched CNT with DCNT ≈ 1.0 nm displaying a simultaneous 50x improvement in minimun current (IMIN) with 2.5x degradation in contact resistance compared to DCNT ≈ 1.4 nm using a Pd side-bonded contact. A method to enhance the performance of low-leakage CNFETs is demonstrated using sub-monolayer self-aligned contact doping with 0.8 nm of MoOX, which delivers a 57% reduction in contact resistance to DCNT ≈ 1.0 nm. Robustness is verified after annealing at 200 °C for 30 min and monitoring stability across 6 months post-fabrication with no change in electrical behaviors.

KW - MoO

KW - carbon nanotube

KW - contact resistance

KW - doping, leakage

KW - low-dimensional materials

UR - http://www.scopus.com/inward/record.url?scp=85178398666&partnerID=8YFLogxK

U2 - 10.1002/aelm.202300519

DO - 10.1002/aelm.202300519

M3 - Article

AN - SCOPUS:85178398666

SN - 2199-160X

VL - 10

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 3

M1 - 2300519

ER -

Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors

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