Self-aligned AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistors for microwave applications

Mau-Chung Chang; N. H. Sheng; P. M. Asbeck; G. J. Sullivan; K. C. Wang; R. J. Anderson; J. A. Higgins

doi:10.1109/16.43693

Self-aligned AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistors for microwave applications

Mau-Chung Chang^*, N. H. Sheng, P. M. Asbeck, G. J. Sullivan, K. C. Wang, R. J. Anderson, J. A. Higgins

^*此作品的通信作者

研究成果: Conference article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The authors discuss the recent development of high-performance AlGaAs/InGaAs/GaAs collector-up HBTs (heterojunction bipolar transistors) fabricated by using a novel self-aligned base/collector process. Transistors with collector widths down to 2.6 μm and base doping up to 1 × 10²⁰/cm³ have been fabricated and tested. Based on s-parameters measured up to 26 GHz, an extrapolated current gain bandwidth, f_t, of 65 GHz and a maximum frequency of oscillation, f_max, of 102 GHz have been obtained. To the authors' knowledge, these are the first C-up HBTs demonstrated to operate at or above microwave frequencies.

原文	English
頁數	1
期刊	IEEE Transactions on Electron Devices
卷	36
發行號	11 pt 1
DOIs	https://doi.org/10.1109/16.43693
出版狀態	Published - 1 11月 1989
事件	Photovoltaic Module Reliability Workshop - Golden, CO, USA 持續時間: 21 6月 1989 → 21 6月 1989

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@article{4db58076d244414cb25eed63fa0e56ce,

title = "Self-aligned AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistors for microwave applications",

abstract = "The authors discuss the recent development of high-performance AlGaAs/InGaAs/GaAs collector-up HBTs (heterojunction bipolar transistors) fabricated by using a novel self-aligned base/collector process. Transistors with collector widths down to 2.6 μm and base doping up to 1 × 1020/cm3 have been fabricated and tested. Based on s-parameters measured up to 26 GHz, an extrapolated current gain bandwidth, ft, of 65 GHz and a maximum frequency of oscillation, fmax, of 102 GHz have been obtained. To the authors' knowledge, these are the first C-up HBTs demonstrated to operate at or above microwave frequencies.",

author = "Mau-Chung Chang and Sheng, {N. H.} and Asbeck, {P. M.} and Sullivan, {G. J.} and Wang, {K. C.} and Anderson, {R. J.} and Higgins, {J. A.}",

year = "1989",

month = nov,

day = "1",

doi = "10.1109/16.43693",

language = "English",

volume = "36",

journal = "Ieee Transactions On Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "11 pt 1",

note = "null ; Conference date: 21-06-1989 Through 21-06-1989",

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TY - JOUR

T1 - Self-aligned AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistors for microwave applications

AU - Chang, Mau-Chung

AU - Sheng, N. H.

AU - Asbeck, P. M.

AU - Sullivan, G. J.

AU - Wang, K. C.

AU - Anderson, R. J.

AU - Higgins, J. A.

PY - 1989/11/1

Y1 - 1989/11/1

N2 - The authors discuss the recent development of high-performance AlGaAs/InGaAs/GaAs collector-up HBTs (heterojunction bipolar transistors) fabricated by using a novel self-aligned base/collector process. Transistors with collector widths down to 2.6 μm and base doping up to 1 × 1020/cm3 have been fabricated and tested. Based on s-parameters measured up to 26 GHz, an extrapolated current gain bandwidth, ft, of 65 GHz and a maximum frequency of oscillation, fmax, of 102 GHz have been obtained. To the authors' knowledge, these are the first C-up HBTs demonstrated to operate at or above microwave frequencies.

AB - The authors discuss the recent development of high-performance AlGaAs/InGaAs/GaAs collector-up HBTs (heterojunction bipolar transistors) fabricated by using a novel self-aligned base/collector process. Transistors with collector widths down to 2.6 μm and base doping up to 1 × 1020/cm3 have been fabricated and tested. Based on s-parameters measured up to 26 GHz, an extrapolated current gain bandwidth, ft, of 65 GHz and a maximum frequency of oscillation, fmax, of 102 GHz have been obtained. To the authors' knowledge, these are the first C-up HBTs demonstrated to operate at or above microwave frequencies.

UR - http://www.scopus.com/inward/record.url?scp=0024770732&partnerID=8YFLogxK

U2 - 10.1109/16.43693

DO - 10.1109/16.43693

M3 - Conference article

AN - SCOPUS:0024770732

VL - 36

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

IS - 11 pt 1

Y2 - 21 June 1989 through 21 June 1989

ER -

Self-aligned AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistors for microwave applications

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