Selectivity investigation of HfO2 to oxide using wet etching

Tsung Kuei Kang*, Chih Cheng Wang, Bing-Yue Tsui, Yuan Hsin Li

*此作品的通信作者

    研究成果: Conference contribution同行評審

    3 引文 斯高帕斯(Scopus)

    摘要

    Experiments indicate that higher HfO2/oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO2 cmd CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO2 and annealed CVD oxides will result in considerably high HfO2/CVD oxide etching selectivity in IPA/HF solution.

    原文English
    主出版物標題2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
    頁面87-90
    頁數4
    DOIs
    出版狀態Published - 2004
    事件2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW - , Taiwan
    持續時間: 9 9月 200410 9月 2004

    出版系列

    名字2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW

    Conference

    Conference2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
    國家/地區Taiwan
    期間9/09/0410/09/04

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