Selective growth of metal-rich silicide of near-noble metals

King-Ning Tu*

*此作品的通信作者

研究成果: Article同行評審

232 引文 斯高帕斯(Scopus)

摘要

Near-noble metals react with Si to form a metal-rich silicide at 100 to 200°C. Growth of the silicide is selected by the criterion that diffusion of near-noble metal atoms to the silicide-silicon interface is needed in order to maintain a high interface mobility. Structure of the metal-rich silicide facilitates the diffusion. It has been postulated that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.

原文English
頁(從 - 到)221-224
頁數4
期刊Applied Physics Letters
27
發行號4
DOIs
出版狀態Published - 1 十二月 1975

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