Selective Growth of Carbon Nanotubes on Prepatterned Amorphous Silicon Thin Films by Electroless Plating Ni

C. W. Chao*, Yew-Chuhg Wu, Gau Ren Hu, Ming Shian Feng

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Selective growth of carbon nanotubes (CNTs) synthesized at low temperature by electroless plating Ni was proposed for the first time in this study. After electroless plating, Ni nanoparticles were selectively deposited on the prepatterned amorphous silicon (a-Si) thin films. After plasma-enhanced chemical vapor deposition, well-aligned CNTs were observed only on the Ni-coated a-Si islands. The diameter, density, and the field emission of CNTs could be controlled easily by the Ni plating time. The achievement of controlling the site density and growth area is significant for applications of carbon nanotubes as field emission devices, nanoelectrode arrays, etc.

原文English
期刊Journal of the Electrochemical Society
150
發行號9
DOIs
出版狀態Published - 1 9月 2003

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