摘要
In this paper, we present a method, involving plasma-enhanced atomic layer deposition and constant-power device-localized Joule heating (DLJH), for the selective deposition of palladium oxide (PdO) nanoparticles at the n- region of n+/n-/n+ polysilicon nanobelt (PNB) devices. These PdO-decorated PNB devices were then operated under DLJH so that the temperature of the n- region was maintained during the sensing of H2 gas. From their measured responses, the devices operated at a temperature of 339 K exhibited the most reactive interactions between PdO and H2. Considering the possibility of humidity interference, we also characterized the PdO-decorated PNB devices for H2 sensing at various relative humidities. The PdO nanoparticles on the PNB devices having a grain distance that sustained a spillover effect were almost immune to RH interference.
原文 | English |
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頁(從 - 到) | 10365-10374 |
頁數 | 10 |
期刊 | ACS Applied Nano Materials |
卷 | 6 |
發行號 | 12 |
DOIs | |
出版狀態 | Published - 23 6月 2023 |