Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices

M. F. Li; H. Y. Yu; Y. T. Hou; J. F. Kang; X. P. Wang; C. Shen; C. Ren; Y. C. Yeo; C. X. Zhu; D. S.H. Chan; Albert Chin; D. L. Kwong

doi:10.1109/ICSICT.2004.1435028

Selected topics on HfO ₂ gate dielectrics for future ULSI CMOS devices

M. F. Li^*
, H. Y. Yu
, Y. T. Hou
, J. F. Kang
, X. P. Wang
, C. Shen
, C. Ren
, Y. C. Yeo
, C. X. Zhu
, D. S.H. Chan
, Albert Chin
, D. L. Kwong

^*此作品的通信作者

研究成果: Paper › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Based on our recent investigation on HfO ₂ high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO ₂ can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift.

原文	English
頁面	366-371
頁數	6
DOIs	https://doi.org/10.1109/ICSICT.2004.1435028
出版狀態	Published - 10月 2004
事件	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, 中國持續時間: 18 10月 2004 → 21 10月 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
國家/地區	中國
城市	Beijing
期間	18/10/04 → 21/10/04

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10.1109/ICSICT.2004.1435028

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Li, M. F., Yu, H. Y., Hou, Y. T., Kang, J. F., Wang, X. P., Shen, C., Ren, C., Yeo, Y. C., Zhu, C. X., Chan, D. S. H., Chin, A., & Kwong, D. L. (2004). Selected topics on HfO ₂ gate dielectrics for future ULSI CMOS devices. 366-371. 論文發表於 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, 中國. https://doi.org/10.1109/ICSICT.2004.1435028

@conference{584c5b50ee124428968f27e125109655,

title = "Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices",

abstract = "Based on our recent investigation on HfO 2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO 2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift.",

author = "Li, \{M. F.\} and Yu, \{H. Y.\} and Hou, \{Y. T.\} and Kang, \{J. F.\} and Wang, \{X. P.\} and C. Shen and C. Ren and Yeo, \{Y. C.\} and Zhu, \{C. X.\} and Chan, \{D. S.H.\} and Albert Chin and Kwong, \{D. L.\}",

year = "2004",

month = oct,

doi = "10.1109/ICSICT.2004.1435028",

language = "English",

pages = "366--371",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

}

Li, MF, Yu, HY, Hou, YT, Kang, JF, Wang, XP, Shen, C, Ren, C, Yeo, YC, Zhu, CX, Chan, DSH, Chin, A & Kwong, DL 2004, 'Selected topics on HfO ₂ gate dielectrics for future ULSI CMOS devices', 論文發表於 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, 中國, 18/10/04 - 21/10/04 頁 366-371. https://doi.org/10.1109/ICSICT.2004.1435028

TY - CONF

T1 - Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices

AU - Li, M. F.

AU - Yu, H. Y.

AU - Hou, Y. T.

AU - Kang, J. F.

AU - Wang, X. P.

AU - Shen, C.

AU - Ren, C.

AU - Yeo, Y. C.

AU - Zhu, C. X.

AU - Chan, D. S.H.

AU - Chin, Albert

AU - Kwong, D. L.

PY - 2004/10

Y1 - 2004/10

N2 - Based on our recent investigation on HfO 2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO 2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift.

AB - Based on our recent investigation on HfO 2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO 2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift.

UR - https://www.scopus.com/pages/publications/21644439756

U2 - 10.1109/ICSICT.2004.1435028

DO - 10.1109/ICSICT.2004.1435028

M3 - Paper

AN - SCOPUS:21644439756

SP - 366

EP - 371

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices

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Selected topics on HfO ₂ gate dielectrics for future ULSI CMOS devices