摘要
Based on our recent investigation on HfO 2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO 2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift.
原文 | English |
---|---|
頁面 | 366-371 |
頁數 | 6 |
DOIs | |
出版狀態 | Published - 10月 2004 |
事件 | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, 中國 持續時間: 18 10月 2004 → 21 10月 2004 |
Conference
Conference | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 |
---|---|
國家/地區 | 中國 |
城市 | Beijing |
期間 | 18/10/04 → 21/10/04 |