Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices

M. F. Li*, H. Y. Yu, Y. T. Hou, J. F. Kang, X. P. Wang, C. Shen, C. Ren, Y. C. Yeo, C. X. Zhu, D. S.H. Chan, Albert Chin, D. L. Kwong

*此作品的通信作者

    研究成果: Paper同行評審

    6 引文 斯高帕斯(Scopus)

    摘要

    Based on our recent investigation on HfO 2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO 2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift.

    原文English
    頁面366-371
    頁數6
    DOIs
    出版狀態Published - 10月 2004
    事件2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, 中國
    持續時間: 18 10月 200421 10月 2004

    Conference

    Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
    國家/地區中國
    城市Beijing
    期間18/10/0421/10/04

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