Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films

F. Y. Hsu, C. C. Leu, Chao-Hsin Chien, C. T. Hu

    研究成果: Conference contribution同行評審

    摘要

    The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi 2 Ta 2x O 9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi 2 Ta 2 O 9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi 2 Ta 2 O 9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2 Ta 1 8 O 9 buffered SrBi 2 Ta 2 O 9 thin film, with maximum 2Pr values about 19.7 μ C/cm 2 , which was almost 93% greater than that of specimen with the stoichiometric buffered one.

    原文English
    主出版物標題2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
    頁面117-118
    頁數2
    DOIs
    出版狀態Published - 1 12月 2007
    事件2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
    持續時間: 27 5月 200731 5月 2007

    出版系列

    名字IEEE International Symposium on Applications of Ferroelectrics

    Conference

    Conference2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
    國家/地區Japan
    城市Nara-city
    期間27/05/0731/05/07

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