Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films

F. Y. Hsu; C. C. Leu; Chao-Hsin Chien; C. T. Hu

doi:10.1109/ISAF.2007.4393187

Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films

F. Y. Hsu, C. C. Leu, Chao-Hsin Chien, C. T. Hu

研究成果: Conference contribution › 同行評審

摘要

The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi₂Ta_2xO₉ (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi₂Ta₂O₉ ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi₂Ta₂O₉ thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi ₂Ta_{1 8}O₉ buffered SrBi₂Ta ₂O₉ thin film, with maximum 2Pr values about 19.7 μ C/cm², which was almost 93% greater than that of specimen with the stoichiometric buffered one.

原文	English
主出版物標題	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
頁面	117-118
頁數	2
DOIs	https://doi.org/10.1109/ISAF.2007.4393187
出版狀態	Published - 2007
事件	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, 日本持續時間: 27 5月 2007 → 31 5月 2007

出版系列

名字	IEEE International Symposium on Applications of Ferroelectrics

Conference

Conference	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
國家/地區	日本
城市	Nara-city
期間	27/05/07 → 31/05/07

存取文件

10.1109/ISAF.2007.4393187

其它文件與鏈接

Link to publication in Scopus

引用此

Hsu, F. Y., Leu, C. C., Chien, C.-H., & Hu, C. T. (2007). Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. 於 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (頁 117-118). 文章 4393187 (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393187

@inproceedings{245f051f4da2428e8d4f1fe048d933fd,

title = "Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films",

abstract = "The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi2Ta2xO9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi2Ta2O9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi2Ta2O9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2Ta1 8O9 buffered SrBi2Ta 2O9 thin film, with maximum 2Pr values about 19.7 μ C/cm2, which was almost 93% greater than that of specimen with the stoichiometric buffered one.",

author = "Hsu, {F. Y.} and Leu, {C. C.} and Chao-Hsin Chien and Hu, {C. T.}",

year = "2007",

doi = "10.1109/ISAF.2007.4393187",

language = "English",

isbn = "1424413338",

series = "IEEE International Symposium on Applications of Ferroelectrics",

pages = "117--118",

booktitle = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF",

note = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF ; Conference date: 27-05-2007 Through 31-05-2007",

}

Hsu, FY, Leu, CC, Chien, C-H & Hu, CT 2007, Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. 於 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393187, IEEE International Symposium on Applications of Ferroelectrics, 頁 117-118, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, 日本, 27/05/07. https://doi.org/10.1109/ISAF.2007.4393187

Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. / Hsu, F. Y.; Leu, C. C.; Chien, Chao-Hsin 等.
2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 117-118 4393187 (IEEE International Symposium on Applications of Ferroelectrics).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films

AU - Hsu, F. Y.

AU - Leu, C. C.

AU - Chien, Chao-Hsin

AU - Hu, C. T.

PY - 2007

Y1 - 2007

N2 - The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi2Ta2xO9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi2Ta2O9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi2Ta2O9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2Ta1 8O9 buffered SrBi2Ta 2O9 thin film, with maximum 2Pr values about 19.7 μ C/cm2, which was almost 93% greater than that of specimen with the stoichiometric buffered one.

AB - The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi2Ta2xO9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi2Ta2O9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi2Ta2O9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2Ta1 8O9 buffered SrBi2Ta 2O9 thin film, with maximum 2Pr values about 19.7 μ C/cm2, which was almost 93% greater than that of specimen with the stoichiometric buffered one.

UR - http://www.scopus.com/inward/record.url?scp=51349141437&partnerID=8YFLogxK

U2 - 10.1109/ISAF.2007.4393187

DO - 10.1109/ISAF.2007.4393187

M3 - Conference contribution

AN - SCOPUS:51349141437

SN - 1424413338

SN - 9781424413331

T3 - IEEE International Symposium on Applications of Ferroelectrics

SP - 117

EP - 118

BT - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF

T2 - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF

Y2 - 27 May 2007 through 31 May 2007

ER -

Hsu FY, Leu CC, Chien CH, Hu CT. Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. 於 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 117-118. 4393187. (IEEE International Symposium on Applications of Ferroelectrics). doi: 10.1109/ISAF.2007.4393187