Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films

F. Y. Hsu, C. C. Leu, Chao-Hsin Chien, C. T. Hu

    研究成果: Conference contribution同行評審

    摘要

    The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi2Ta2xO9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi2Ta2O9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi2Ta2O9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2Ta1 8O9 buffered SrBi2Ta 2O9 thin film, with maximum 2Pr values about 19.7 μ C/cm2, which was almost 93% greater than that of specimen with the stoichiometric buffered one.

    原文English
    主出版物標題2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
    頁面117-118
    頁數2
    DOIs
    出版狀態Published - 2007
    事件2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
    持續時間: 27 5月 200731 5月 2007

    出版系列

    名字IEEE International Symposium on Applications of Ferroelectrics

    Conference

    Conference2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
    國家/地區Japan
    城市Nara-city
    期間27/05/0731/05/07

    指紋

    深入研究「Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films」主題。共同形成了獨特的指紋。

    引用此