Second Breakdown of Vertical Power MOSFET's

Chen-Ming Hu, Min Hwa Chi

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

It is shown that a phenomenon of second breakdown similar to that in bipolar transistors can occur in vertical power MOSFET's. A model for the phenomenon of second breakdown involving the avalanche multiplication of the channel current, the parasitic bipolar transistor, and base resistance is proposed. After presenting the theory, this model is compared with experiments on four-terminal V-groove test devices in which the substrate can be accessed independently. Good agreement is achieved between calculated and measured boundaries of the safe operating area. The model should be applicable to DMOS devices as well.

原文English
頁(從 - 到)1287-1293
頁數7
期刊IEEE Transactions on Electron Devices
29
發行號8
DOIs
出版狀態Published - 1 1月 1982

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