Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes
Shiyang Zhu*, Jingde Chen, H. Y. Yu, S. J. Whang, J. H. Chen, C. Shen, M. F. Li, S. J. Lee, Chunxiang Zhu, D. S.H. Chan, Anyan Du, C. H. Tung, Jagar Singh, Albert Chin, D. L. Kwong
*此作品的通信作者
研究成果: Paper › 同行評審
指紋
深入研究「Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes」主題。共同形成了獨特的指紋。