Schottky-Embedded Silicon-Controlled Rectifier with High Holding Voltage Realized in a 0.18-μm Low-Voltage CMOS Process

Rong Kun Chang, Bo Wei Peng, Ming-Dou Ker*

*此作品的通信作者

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

The silicon-controlled rectifier (SCR) has been reported to protect CMOS integrated circuits (ICs), due to high ESD robustness within a small silicon area. However, the holding voltage ( {V}-{h}{)} of the SCR device was too low to suffer the latch-up issue. Thus, the {V}-{h} value of the SCR device must be improved to be greater than the circuit operating voltage for safe applications. In this work, the Schottky-embedded modified lateral SCR (SMLSCR) with high holding voltage for ESD protection was proposed and verified in a 0.18-boldsymbol mu text{m} 1.8-V/3.3-V CMOS process. By using the Schottky barrier junction, the {V}-{h} value of the SCR device can be improved by the reverse-bias Schottky barrier diode (SBD) that is embedded into the SCR device structure. Among those experimental results on the SMLSCR devices with split layout parameters in the silicon test chip, the SMLSCR device without text{P}{+} guard ring has the best second breakdown current ( {I}-{{t{2}}}{)} of 3.1 A and a high {V}-{h} value of 9.7 V.

原文English
文章編號9359347
頁(從 - 到)1764-1771
頁數8
期刊IEEE Transactions on Electron Devices
68
發行號4
DOIs
出版狀態Published - 4月 2021

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