Schottky contacts of Gd-Pt and Gd-V alloys on n-Si and p-Si

R. Thompson*, M. Eizenberg, King-Ning Tu


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Alloys of Gd-Pt and Gd-V, both Gd-rich and Pt or V-rich, have been prepared by coevaporation onto n- and p-type Si for Schottky contact formation. Structural and electrical properties of these contacts after various heat treatments have been studied by combining x-ray diffraction, backscattering spectroscopy, and current-voltage measurement. We found that these alloys produced a mixture of silicides on Si; i.e., they formed parallel contacts of GdSi2 and PtSi or GdSi2 and VSi2 to Si. We also found that the sum of apparent Schottky barrier heights of these parallel contacts on n-Si and p-Si is not necessarily equal to the value of the band gap of Si, which we recall is always true for a single phase contact.

頁(從 - 到)6763-6768
期刊Journal of Applied Physics
出版狀態Published - 1 12月 1981


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