Schottky barrier of nonuniform contacts to n-type and p-type silicon

R. D. Thompson*, King-Ning Tu

*此作品的通信作者

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.

原文English
頁(從 - 到)4285-4288
頁數4
期刊Journal of Applied Physics
53
發行號6
DOIs
出版狀態Published - 1 12月 1982

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