Schottky barrier of nonuniform contacts to n-type and p-type silicon

R. D. Thompson; King-Ning Tu

doi:10.1063/1.331257

Schottky barrier of nonuniform contacts to n-type and p-type silicon

R. D. Thompson^*, King-Ning Tu

^*此作品的通信作者

國際半導體產業學院

研究成果: Article › 同行評審

22 引文斯高帕斯（Scopus）

摘要

A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.

原文	English
頁（從 - 到）	4285-4288
頁數	4
期刊	Journal of Applied Physics
卷	53
發行號	6
DOIs	https://doi.org/10.1063/1.331257
出版狀態	Published - 1 12月 1982

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Schottky barrier of nonuniform contacts to n-type and p-type silicon

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