Schottky-barrier height of iridium silicide

I. Ohdomari*, King-Ning Tu, F. M. D'Heurle, T. S. Kuan, S. Petersson

*此作品的通信作者

研究成果: Article同行評審

37 引文 斯高帕斯(Scopus)

摘要

Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500°C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the silicides measured. The high value leads us to conclude that the silicide does not follow the linear relation which exists between barrier height and heat of formation of most other silicides.

原文English
頁(從 - 到)1028-1030
頁數3
期刊Applied Physics Letters
33
發行號12
DOIs
出版狀態Published - 1 12月 1978

指紋

深入研究「Schottky-barrier height of iridium silicide」主題。共同形成了獨特的指紋。

引用此