Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs

M. C. Wang; T. C. Chang; Po-Tsun Liu; Y. Y. Li; R. W. Xiao; L. F. Lin; J. R. Chen

doi:10.1149/1.2756303

Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs

M. C. Wang^*, T. C. Chang, Po-Tsun Liu, Y. Y. Li, R. W. Xiao, L. F. Lin, J. R. Chen

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd m2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.

原文	English
頁（從 - 到）	J123-J125
頁數	3
期刊	Electrochemical and Solid-State Letters
卷	10
發行號	10
DOIs	https://doi.org/10.1149/1.2756303
出版狀態	Published - 1月 2007

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@article{9b23551439504581bba56561ea10d268,

title = "Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs",

abstract = "For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd m2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.",

author = "Wang, \{M. C.\} and Chang, \{T. C.\} and Po-Tsun Liu and Li, \{Y. Y.\} and Xiao, \{R. W.\} and Lin, \{L. F.\} and Chen, \{J. R.\}",

year = "2007",

month = jan,

doi = "10.1149/1.2756303",

language = "English",

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issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

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TY - JOUR

T1 - Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs

AU - Wang, M. C.

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Li, Y. Y.

AU - Xiao, R. W.

AU - Lin, L. F.

AU - Chen, J. R.

PY - 2007/1

Y1 - 2007/1

N2 - For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd m2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.

AB - For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd m2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.

UR - https://www.scopus.com/pages/publications/34547837529

U2 - 10.1149/1.2756303

DO - 10.1149/1.2756303

M3 - Article

AN - SCOPUS:34547837529

SN - 1099-0062

VL - 10

SP - J123-J125

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs

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