Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs

M. C. Wang*, T. C. Chang, Po-Tsun Liu, Y. Y. Li, R. W. Xiao, L. F. Lin, J. R. Chen

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd m2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.

原文English
頁(從 - 到)J123-J125
頁數3
期刊Electrochemical and Solid-State Letters
10
發行號10
DOIs
出版狀態Published - 1月 2007

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