摘要
For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd m2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.
原文 | English |
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頁(從 - 到) | J123-J125 |
頁數 | 3 |
期刊 | Electrochemical and Solid-State Letters |
卷 | 10 |
發行號 | 10 |
DOIs | |
出版狀態 | Published - 1月 2007 |