"S-shaped" photoluminescence emission shift in Cu(In,Ga)Se 2 thin films

Y. K. Liao*, S. Y. Kuo, F. I. Lai, W. T. Lin, D. H. Hsieh, D. W. Chiu, Hao-Chung Kuo

*此作品的通信作者

研究成果: Conference article同行評審

摘要

We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.

原文English
文章編號AF4B.32
期刊Asia Communications and Photonics Conference, ACP
DOIs
出版狀態Published - 2012
事件2012 Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China
持續時間: 7 11月 201210 11月 2012

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