摘要
We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.
原文 | English |
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文章編號 | AF4B.32 |
期刊 | Asia Communications and Photonics Conference, ACP |
DOIs | |
出版狀態 | Published - 2012 |
事件 | 2012 Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, 中國 持續時間: 7 11月 2012 → 10 11月 2012 |