RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

Wun Cheng Luo*, Jen Chieh Liu, Hsien Tsung Feng, Yen Chuan Lin, Jiun Jia Huang, Kuan Liang Lin, Tuo-Hung Hou

*此作品的通信作者

研究成果: Conference contribution同行評審

16 引文 斯高帕斯(Scopus)

摘要

This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.

原文English
主出版物標題2012 IEEE International Electron Devices Meeting, IEDM 2012
頁面9.5.1-9.5.4
頁數4
DOIs
出版狀態Published - 10 十二月 2012
事件2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
持續時間: 10 十二月 201213 十二月 2012

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2012 IEEE International Electron Devices Meeting, IEDM 2012
國家/地區United States
城市San Francisco, CA
期間10/12/1213/12/12

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