RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

Wun Cheng Luo; Jen Chieh Liu; Hsien Tsung Feng; Yen Chuan Lin; Jiun Jia Huang; Kuan Liang Lin; Tuo-Hung Hou

doi:10.1109/IEDM.2012.6479012

RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

Wun Cheng Luo^*, Jen Chieh Liu, Hsien Tsung Feng, Yen Chuan Lin, Jiun Jia Huang, Kuan Liang Lin, Tuo-Hung Hou

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

18 引文斯高帕斯（Scopus）

摘要

This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.

原文	English
主出版物標題	2012 IEEE International Electron Devices Meeting, IEDM 2012
頁面	9.5.1-9.5.4
頁數	4
DOIs	https://doi.org/10.1109/IEDM.2012.6479012
出版狀態	Published - 10 12月 2012
事件	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States 持續時間: 10 12月 2012 → 13 12月 2012

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（列印）	0163-1918

Conference

Conference	2012 IEEE International Electron Devices Meeting, IEDM 2012
國家/地區	United States
城市	San Francisco, CA
期間	10/12/12 → 13/12/12

存取文件

10.1109/IEDM.2012.6479012

其它文件與鏈接

Link to publication in Scopus

引用此

Luo, W. C., Liu, J. C., Feng, H. T., Lin, Y. C., Huang, J. J., Lin, K. L., & Hou, T-H. (2012). RRAM SET speed-disturb dilemma and rapid statistical prediction methodology. 於 2012 IEEE International Electron Devices Meeting, IEDM 2012 (頁 9.5.1-9.5.4). Article 6479012 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479012

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title = "RRAM SET speed-disturb dilemma and rapid statistical prediction methodology",

abstract = "This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.",

author = "Luo, {Wun Cheng} and Liu, {Jen Chieh} and Feng, {Hsien Tsung} and Lin, {Yen Chuan} and Huang, {Jiun Jia} and Lin, {Kuan Liang} and Tuo-Hung Hou",

year = "2012",

month = dec,

day = "10",

doi = "10.1109/IEDM.2012.6479012",

language = "English",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "9.5.1--9.5.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

Luo, WC, Liu, JC, Feng, HT, Lin, YC, Huang, JJ, Lin, KL & Hou, T-H 2012, RRAM SET speed-disturb dilemma and rapid statistical prediction methodology. 於 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479012, Technical Digest - International Electron Devices Meeting, IEDM, 頁 9.5.1-9.5.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 10/12/12. https://doi.org/10.1109/IEDM.2012.6479012

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AU - Luo, Wun Cheng

AU - Liu, Jen Chieh

AU - Feng, Hsien Tsung

AU - Lin, Yen Chuan

AU - Huang, Jiun Jia

AU - Lin, Kuan Liang

AU - Hou, Tuo-Hung

PY - 2012/12/10

Y1 - 2012/12/10

N2 - This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.

AB - This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.

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U2 - 10.1109/IEDM.2012.6479012

DO - 10.1109/IEDM.2012.6479012

M3 - Conference contribution

AN - SCOPUS:84876132316

SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -

RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

摘要

出版系列

Conference

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