Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors

Hsiao-Wen Zan*, Chang Hung Li, Chun Cheng Yeh, Ming Zhi Dai, Hsin-Fei Meng, Chuang Chuang Tsai

*此作品的通信作者

研究成果: Article同行評審

91 引文 斯高帕斯(Scopus)

摘要

An organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a -IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a -IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a -IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a -IGZO TFT technology.

原文English
文章編號253503
期刊Applied Physics Letters
98
發行號25
DOIs
出版狀態Published - 20 6月 2011

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