Room-temperature mid-infrared "m"-type GaAsSb/InGaAs quantum well lasers on InP substrate

Chia Hao Chang; Zong Lin Li; Chien-Hung Pan; Hong Ting Lu; Chien-Ping Lee; Sheng-Di Lin

doi:10.1063/1.4865170

Room-temperature mid-infrared "m"-type GaAsSb/InGaAs quantum well lasers on InP substrate

Chia Hao Chang, Zong Lin Li, Chien-Hung Pan, Hong Ting Lu, Chien-Ping Lee, Sheng-Di Lin^*

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17 引文斯高帕斯（Scopus）

摘要

We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234W/cm² and 20.5cm^-1, respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of "M"-type QW laser was superior to the inverse "W"-type one due to its thinner barrier for holes. Further improvement of the "M"-type QW structure could lead to a cost-effective mid-infrared light source.

原文	English
文章編號	063104
期刊	Journal of Applied Physics
卷	115
發行號	6
DOIs	https://doi.org/10.1063/1.4865170
出版狀態	Published - 14 2月 2014

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10.1063/1.4865170

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@article{b16402d9b6414747884ba17388d634fd,

title = "Room-temperature mid-infrared {"}m{"}-type GaAsSb/InGaAs quantum well lasers on InP substrate",

abstract = "We have demonstrated experimentally the InP-based {"}M{"}-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234W/cm2 and 20.5cm-1, respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of {"}M{"}-type QW laser was superior to the inverse {"}W{"}-type one due to its thinner barrier for holes. Further improvement of the {"}M{"}-type QW structure could lead to a cost-effective mid-infrared light source.",

author = "Chang, {Chia Hao} and Li, {Zong Lin} and Chien-Hung Pan and Lu, {Hong Ting} and Chien-Ping Lee and Sheng-Di Lin",

year = "2014",

month = feb,

day = "14",

doi = "10.1063/1.4865170",

language = "English",

volume = "115",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Room-temperature mid-infrared "m"-type GaAsSb/InGaAs quantum well lasers on InP substrate

AU - Chang, Chia Hao

AU - Li, Zong Lin

AU - Pan, Chien-Hung

AU - Lu, Hong Ting

AU - Lee, Chien-Ping

AU - Lin, Sheng-Di

PY - 2014/2/14

Y1 - 2014/2/14

N2 - We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234W/cm2 and 20.5cm-1, respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of "M"-type QW laser was superior to the inverse "W"-type one due to its thinner barrier for holes. Further improvement of the "M"-type QW structure could lead to a cost-effective mid-infrared light source.

AB - We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234W/cm2 and 20.5cm-1, respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of "M"-type QW laser was superior to the inverse "W"-type one due to its thinner barrier for holes. Further improvement of the "M"-type QW structure could lead to a cost-effective mid-infrared light source.

UR - http://www.scopus.com/inward/record.url?scp=84903758854&partnerID=8YFLogxK

U2 - 10.1063/1.4865170

DO - 10.1063/1.4865170

M3 - Article

AN - SCOPUS:84903758854

SN - 0021-8979

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063104

ER -

Room-temperature mid-infrared "m"-type GaAsSb/InGaAs quantum well lasers on InP substrate

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