Room-Temperature Ferroelectricity in Hexagonally Layered α-In2Se3 Nanoflakes down to the Monolayer Limit

Fei Xue*, Weijin Hu, Ko Chun Lee, Li Syuan Lu, Junwei Zhang, Hao Ling Tang, Ali Han, Wei Ting Hsu, Shaobo Tu, Wen-Hao Chang, Chen Hsin Lien, Jr Hau He, Zhidong Zhang, Lain Jong Li, Xixiang Zhang

*此作品的通信作者

研究成果: Article同行評審

93 引文 斯高帕斯(Scopus)

摘要

2D ferroelectric material has emerged as an attractive building block for high-density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking α-In2Se3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal α-In2Se3 nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (≈1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H α-In2Se3 are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics.

原文English
文章編號1803738
頁(從 - 到)1-7
頁數7
期刊Advanced Functional Materials
28
發行號50
DOIs
出版狀態Published - 12 十二月 2018

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