@inproceedings{715ed1b4b574429b8bc1a10629ce9584,
title = "Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode",
abstract = "We report RT EL from Ge/Si QD light-emitting diodes (LED). The LEDs were fabricated in mesa-type structure, with silicon oxide layer on the top for surface/side wall passivation. Different passivation processes have been employed. We found that the EL intensities are relatively less sensitive to temperature in the range of 80 to 300 K. At RT, an internal quantum efficiency up to 0.015 % has been achieved.",
keywords = "Current density, Displays, Electroluminescence, Industrial electronics, Light emitting diodes, Oxidation, Passivation, Physics, Quantum dots, Radiative recombination",
author = "Wen-Hao Chang and Chou, {An Tai} and Chen, {Wen Yen} and Chang, {Hsiang Szu} and Hsu, {Tzu Min} and Zingway Pei and Chen, {Pan Shiu} and Lee, {S. W.} and Lai, {Li Shyue} and Lu, {S. C.} and Tsai, {M. J.}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",
year = "2003",
doi = "10.1109/ISCS.2003.1239940",
language = "English",
series = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "129--130",
booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",
address = "美國",
}