Role of the N-related localized states in the electron emission properties of a GaAsN quantum well

Meng Chien Hsieh*, Jia Feng Wang, Yu Shou Wang, Cheng Hong Yang, Ross C.C. Chen, Chen Hao Chiang, Yung-Fu Chen, Jenn-Fang Chen

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

This study elucidates the influence of the N-related localized states on electron emission properties of a GaAsN quantum well (QW) that is grown by molecular beam epitaxy. The N-related localized states in a GaAsN QW are identified as both optical and electrical electron trap states. Furthermore, exactly how N-related localized states influence the electron emission properties of a GaAsN quantum well is examined. The presence of N-related localized states effectively suppresses the tunneling emission of GaAsN QW electron states, leading to a long electron emission time for the GaAsN QW electron states. Thermal annealing can reduce the number of N-related localized states, resulting in a recovery of the tunneling emission for GaAsN QW electron states. Increasing the annealing temperature can restore the electron emission behavior of GaAsN QW to the typical electron tunneling emission for a high-quality QW.

原文English
文章編號103709
期刊Journal of Applied Physics
110
發行號10
DOIs
出版狀態Published - 15 十一月 2011

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