Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment

Tung Ming Pan; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/55.852956

Robust ultrathin oxynitride dielectrics by NH₃ nitridation and N₂O RTA treatment

Tung Ming Pan, Tan Fu Lei, Tien-Sheng Chao

電子物理學系

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

In this paper, a method to grow robust ultrathin (E_OT = 28 angstroms) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH₃ with additional N₂O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.

原文	English
頁（從 - 到）	378-380
頁數	3
期刊	Ieee Electron Device Letters
卷	21
發行號	8
DOIs	https://doi.org/10.1109/55.852956
出版狀態	Published - 8月 2000

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10.1109/55.852956

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abstract = "In this paper, a method to grow robust ultrathin (EOT = 28 angstroms) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH3 with additional N2O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.",

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AB - In this paper, a method to grow robust ultrathin (EOT = 28 angstroms) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH3 with additional N2O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.

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Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment

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Robust ultrathin oxynitride dielectrics by NH₃ nitridation and N₂O RTA treatment