Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment

Tung Ming Pan, Tan Fu Lei, Tien-Sheng Chao

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

In this paper, a method to grow robust ultrathin (EOT = 28 angstroms) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH3 with additional N2O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.

原文English
頁(從 - 到)378-380
頁數3
期刊Ieee Electron Device Letters
21
發行號8
DOIs
出版狀態Published - 8月 2000

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