In this paper, a method to grow robust ultrathin (EOT = 28 angstroms) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH3 with additional N2O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.
|頁（從 - 到）||378-380|
|期刊||IEEE Electron Device Letters|
|出版狀態||Published - 1 8月 2000|