Robust Forward Gate Bias TDDB Stability in Enhancement-mode Fully Recessed Gate GaN MIS-FETs with ALD Al2O3Gate Dielectric

Shun Wei Tang, Sayeem Bin Kutub, Tian Li Wu*

*此作品的通信作者

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this work, we have demonstrated the robustness of the forward gate bias time-dependent dielectric breakdown (TDDB) stability in fully recessed gate GaN Metal-Insulator-Semiconductor Field-Effect Transistors (MIS-FETs) with an atomic layer deposited (ALD) Al2O3as a gate dielectric. First, an enhancement-mode (E-mode) characteristic with VTH +1V is demonstrated in a fully recessed gate GaN MIS-FET with a 25-nm ALD Al2O3gate dielectric layer. Second, the low gate leakage is observed and the device shows no gate breakdown till 15V at room temperature. Last, an operating gate voltage of 7V (exponential law) or 8.8V (power law) can be extrapolated while considering 1 % of failures for Wg=36mm at 150°C after 10 years, showing a promising forward gate TDDB stability.

原文English
主出版物標題2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728161693
DOIs
出版狀態Published - 20 7月 2020
事件2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020 - Singapore, Singapore
持續時間: 20 7月 202023 7月 2020

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2020-July

Conference

Conference2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
國家/地區Singapore
城市Singapore
期間20/07/2023/07/20

指紋

深入研究「Robust Forward Gate Bias TDDB Stability in Enhancement-mode Fully Recessed Gate GaN MIS-FETs with ALD Al2O3Gate Dielectric」主題。共同形成了獨特的指紋。

引用此