Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots

J. S. Wang*, R. S. Hsiao, Kuo-Jui Lin, L. Wei, Y. T. Wu, A. R. Kovsh, N. A. Maleev, A. V. Sakharov, D. A. Livshits, Jenn-Fang Chen, J. Y. Chi

*此作品的通信作者

研究成果: Conference article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Stacking of InAs/InGaAs/GaAs QDs up to 5 layers has been developed to realize ground state lasing with noticeable output power in the laser diodes with broad and low contrast wave guide (0.6 μm Al0.3Ga 0.7As/GaAs). Lasers emitting at 1310 nm were grown by molecular beam epitaxy and processed into 5 μm wide ridge waveguide diodes. Single lateral mode continuous wave operation was achieved in a 3 mm long diode with as-cleaved facets. The threshold current of 26 mA (Jth = 173 A/cm2), a slope efficiency of 0.43 W/A (ηdif = 45%), a characteristic temperature of 85 K, a vertical beam divergence of 45°, and I-V characteristics with turn-on voltages of 1.0 V and series resistance of 1.5 × 10-4 Ω cm2 were realized in one device simultaneously.

原文English
頁(從 - 到)1339-1342
頁數4
期刊Physica Status Solidi C: Conferences
發行號4
DOIs
出版狀態Published - 1 十二月 2003
事件2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
持續時間: 30 九月 20023 十月 2002

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