Stacking of InAs/InGaAs/GaAs QDs up to 5 layers has been developed to realize ground state lasing with noticeable output power in the laser diodes with broad and low contrast wave guide (0.6 μm Al0.3Ga 0.7As/GaAs). Lasers emitting at 1310 nm were grown by molecular beam epitaxy and processed into 5 μm wide ridge waveguide diodes. Single lateral mode continuous wave operation was achieved in a 3 mm long diode with as-cleaved facets. The threshold current of 26 mA (Jth = 173 A/cm2), a slope efficiency of 0.43 W/A (ηdif = 45%), a characteristic temperature of 85 K, a vertical beam divergence of 45°, and I-V characteristics with turn-on voltages of 1.0 V and series resistance of 1.5 × 10-4 Ω cm2 were realized in one device simultaneously.
|頁（從 - 到）||1339-1342|
|期刊||Physica Status Solidi C: Conferences|
|出版狀態||Published - 1 十二月 2003|
|事件||2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan|
持續時間: 30 九月 2002 → 3 十月 2002