RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

S. B. Chen, C. H. Lai, Albert Chin, J. C. Hsieh*, J. Liu

*此作品的通信作者

    研究成果: Conference article同行評審

    18 引文 斯高帕斯(Scopus)

    摘要

    Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MIM capacitor has good device integrity of low leakage current of 4.3×10-8 A/cm2, small frequency-dependent capacitance reduction, and good reliability.

    原文English
    頁(從 - 到)201-204
    頁數4
    期刊IEEE MTT-S International Microwave Symposium Digest
    1
    DOIs
    出版狀態Published - 2002
    事件2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States
    持續時間: 2 6月 20027 6月 2002

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