RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

S. B. Chen; C. H. Lai; Albert Chin; J. C. Hsieh; J. Liu

doi:10.1109/MWSYM.2002.1011593

RF MIM capacitors using high-K Al₂O₃ and AlTiO_x dielectrics

S. B. Chen, C. H. Lai, Albert Chin, J. C. Hsieh^*, J. Liu

^*此作品的通信作者

研究成果 › 同行評審

18 引文斯高帕斯（Scopus）

摘要

Record high capacitance density of 0.5 and 1.0 μF/cm² are obtained for Al₂O₃ and AlTiO_x MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiO_x MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al₂O₃ MIM capacitor has good device integrity of low leakage current of 4.3×10^-8 A/cm², small frequency-dependent capacitance reduction, and good reliability.

原文	English
頁（從 - 到）	201-204
頁數	4
期刊	IEEE MTT-S International Microwave Symposium Digest
卷	1
DOIs	https://doi.org/10.1109/MWSYM.2002.1011593
出版狀態	Published - 2002
事件	2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, 美國持續時間: 2 6月 2002 → 7 6月 2002

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10.1109/MWSYM.2002.1011593

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title = "RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics",

abstract = "Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MIM capacitor has good device integrity of low leakage current of 4.3×10-8 A/cm2, small frequency-dependent capacitance reduction, and good reliability.",

author = "Chen, {S. B.} and Lai, {C. H.} and Albert Chin and Hsieh, {J. C.} and J. Liu",

year = "2002",

doi = "10.1109/MWSYM.2002.1011593",

language = "English",

volume = "1",

pages = "201--204",

journal = "IEEE MTT-S International Microwave Symposium Digest",

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note = "2002 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 02-06-2002 Through 07-06-2002",

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TY - JOUR

T1 - RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

AU - Chen, S. B.

AU - Lai, C. H.

AU - Chin, Albert

AU - Hsieh, J. C.

AU - Liu, J.

PY - 2002

Y1 - 2002

N2 - Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MIM capacitor has good device integrity of low leakage current of 4.3×10-8 A/cm2, small frequency-dependent capacitance reduction, and good reliability.

AB - Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MIM capacitor has good device integrity of low leakage current of 4.3×10-8 A/cm2, small frequency-dependent capacitance reduction, and good reliability.

UR - http://www.scopus.com/inward/record.url?scp=0036073714&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2002.1011593

DO - 10.1109/MWSYM.2002.1011593

M3 - Conference article

AN - SCOPUS:0036073714

SN - 0149-645X

VL - 1

SP - 201

EP - 204

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2002 IEEE MTT-S International Microwave Symposium Digest

Y2 - 2 June 2002 through 7 June 2002

ER -

RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

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RF MIM capacitors using high-K Al₂O₃ and AlTiO_x dielectrics