RF-interconnect for multi-Gb/s digital interface based on 10-GHz RF-modulation in 0.18μm CMOS

Hyunchol Shin*, Zhiwei Xu, Mau-Chung Chang

*此作品的通信作者

    研究成果: Conference article同行評審

    7 引文 斯高帕斯(Scopus)

    摘要

    We present a RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2V) and potentially enhanced data speed. A prototype RFI implemented in 0.18μm CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5-GHz RF-carrier.

    原文English
    頁(從 - 到)477-480
    頁數4
    期刊IEEE MTT-S International Microwave Symposium Digest
    1
    DOIs
    出版狀態Published - 2002
    事件2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States
    持續時間: 2 6月 20027 6月 2002

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