RF-interconnect for multi-Gb/s digital interface based on 10-GHz RF-modulation in 0.18μm CMOS

Hyunchol Shin; Zhiwei Xu; Mau-Chung Chang

doi:10.1109/MWSYM.2002.1011659

RF-interconnect for multi-Gb/s digital interface based on 10-GHz RF-modulation in 0.18μm CMOS

Hyunchol Shin^*, Zhiwei Xu, Mau-Chung Chang

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7 引文斯高帕斯（Scopus）

摘要

We present a RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2V) and potentially enhanced data speed. A prototype RFI implemented in 0.18μm CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5-GHz RF-carrier.

原文	English
頁（從 - 到）	477-480
頁數	4
期刊	IEEE MTT-S International Microwave Symposium Digest
卷	1
DOIs	https://doi.org/10.1109/MWSYM.2002.1011659
出版狀態	Published - 2002
事件	2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, 美國持續時間: 2 6月 2002 → 7 6月 2002

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abstract = "We present a RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2V) and potentially enhanced data speed. A prototype RFI implemented in 0.18μm CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5-GHz RF-carrier.",

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AU - Xu, Zhiwei

AU - Chang, Mau-Chung

PY - 2002

Y1 - 2002

N2 - We present a RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2V) and potentially enhanced data speed. A prototype RFI implemented in 0.18μm CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5-GHz RF-carrier.

AB - We present a RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2V) and potentially enhanced data speed. A prototype RFI implemented in 0.18μm CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5-GHz RF-carrier.

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M3 - Conference article

AN - SCOPUS:0036316111

SN - 0149-645X

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SP - 477

EP - 480

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2002 IEEE MTT-S International Microwave Symposium Digest

Y2 - 2 June 2002 through 7 June 2002

ER -

RF-interconnect for multi-Gb/s digital interface based on 10-GHz RF-modulation in 0.18μm CMOS

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