摘要
In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.
原文 | English |
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文章編號 | 054003 |
頁(從 - 到) | 1-14 |
頁數 | 14 |
期刊 | Semiconductor Science and Technology |
卷 | 30 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 1 5月 2015 |