Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping

Yuan Ming Chang, Shih Hsien Yang, Che Yi Lin, Chang Hung Chen, Chen Hsin Lien, Wen-Bin Jian, Keiji Ueno, Yuen Wuu Suen*, Kazuhito Tsukagoshi, Yen Fu Lin

*此作品的通信作者

研究成果: Article同行評審

65 引文 斯高帕斯(Scopus)

摘要

Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe2) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe2, E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance.

原文English
文章編號1706995
頁(從 - 到)1-7
頁數7
期刊Advanced Materials
30
發行號13
DOIs
出版狀態Published - 27 3月 2018

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