RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS

Jian Hsing Lee*, Ching Ho Li, Karuna Nidhi, Chih Hsuan Lin, Chieh Yao Chuang, Wei Hsin Lin, Kei Chieh Hsu, Yeh Ning Jou, Shao Chang Huang, Chih Cherng Liao, Ke Horng Chen

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

The nonuniform current distribution of high-voltage laterally-diffused metal-oxide semiconductor (HV LDMOS) is an inevitable phenomenon if the process does not consider the shadow effect of implant. It is because some implants to fabricate transistor are not the self-aligned processes and usually tilted at an angle. From T-CAD simulation, it reveals that the width and doping profile of reduced surface (RESURF) regions vary with the location of HV LDMOS, resulting in the current crowding at the shortest RESURF region due to the base push-out induced snapback.

原文English
主出版物標題2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350301649
DOIs
出版狀態Published - 2023
事件2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 - Pulau Pinang, Malaysia
持續時間: 24 7月 202327 7月 2023

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2023-July

Conference

Conference2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
國家/地區Malaysia
城市Pulau Pinang
期間24/07/2327/07/23

指紋

深入研究「RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS」主題。共同形成了獨特的指紋。

引用此