Resistive switching memory device based on amorphous al-zn-sn-o film for flexible electronics application

Yang Shun Fan; Po Tsun Liu; Ching Hui Hsu; Hsuan Ying Lai

doi:10.1002/j.2168-0159.2012.tb06051.x

Resistive switching memory device based on amorphous al-zn-sn-o film for flexible electronics application

Yang Shun Fan
, Po Tsun Liu^*
, Ching Hui Hsu
, Hsuan Ying Lai

^*此作品的通信作者

光電工程學系

研究成果: Conference article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.

原文	English
頁（從 - 到）	1340-1342
頁數	3
期刊	Digest of Technical Papers - SID International Symposium
卷	43
發行號	1
DOIs	https://doi.org/10.1002/j.2168-0159.2012.tb06051.x
出版狀態	Published - 2012
事件	49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, 美國持續時間: 3 6月 2012 → 8 6月 2012

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10.1002/j.2168-0159.2012.tb06051.x

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title = "Resistive switching memory device based on amorphous al-zn-sn-o film for flexible electronics application",

abstract = "We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.",

keywords = "AZTO, Flexible electronic, RRAM, Resistive switching",

author = "Fan, \{Yang Shun\} and Liu, \{Po Tsun\} and Hsu, \{Ching Hui\} and Lai, \{Hsuan Ying\}",

note = "Publisher Copyright: {\textcopyright} 2012 SID.; 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

year = "2012",

doi = "10.1002/j.2168-0159.2012.tb06051.x",

language = "English",

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journal = "Digest of Technical Papers - SID International Symposium",

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T1 - Resistive switching memory device based on amorphous al-zn-sn-o film for flexible electronics application

AU - Fan, Yang Shun

AU - Liu, Po Tsun

AU - Hsu, Ching Hui

AU - Lai, Hsuan Ying

PY - 2012

Y1 - 2012

N2 - We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.

AB - We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.

KW - AZTO

KW - Flexible electronic

KW - RRAM

KW - Resistive switching

UR - https://www.scopus.com/pages/publications/84983291813

U2 - 10.1002/j.2168-0159.2012.tb06051.x

DO - 10.1002/j.2168-0159.2012.tb06051.x

M3 - Conference article

AN - SCOPUS:84983291813

SN - 0097-966X

VL - 43

SP - 1340

EP - 1342

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Resistive switching memory device based on amorphous al-zn-sn-o film for flexible electronics application

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