We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.
|頁（從 - 到）||1340-1342|
|期刊||Digest of Technical Papers - SID International Symposium|
|出版狀態||Published - 1 1月 2012|
|事件||49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States|
持續時間: 3 6月 2012 → 8 6月 2012