Resistive switching characteristics of Pt/CeOx/TiN memory device

Muhammad Ismail; Ijaz Talib; Chun Yang Huang; Chung Jung Hung; Tsung Ling Tsai; Jheng Hong Jieng; Umesh Chand; Chun An Lin; Ejaz Ahmed; Anwar Manzoor Rana; Muhammad Younus Nadeem; Tseung-Yuen Tseng

doi:10.7567/JJAP.53.060303

Resistive switching characteristics of Pt/CeO_x/TiN memory device

Muhammad Ismail, Ijaz Talib, Chun Yang Huang, Chung Jung Hung, Tsung Ling Tsai, Jheng Hong Jieng, Umesh Chand, Chun An Lin, Ejaz Ahmed, Anwar Manzoor Rana, Muhammad Younus Nadeem, Tseung-Yuen Tseng^*

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

The resistive switching characteristics of Pt/CeO_x/TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory (RRAM). The X-ray diffraction characteristics of the sputtered CeO_x layer indicate the formation of nanocrystalline single-phase CeO₂ with a cubic fluorite structure. The existence of oxygen vacancies in the Pt/CeO_x/TiN memory device was determined by X-ray photoelectron spectroscopic studies, while the presence of an interfacial layer between CeO_x and the TiN bottom electrode was investigated by Xray diffraction and high resolution transmission electron microscopy. The TiON layer formed at the TiN/CeO_x interface seems to play a key role in the resistive switching mechanism of the device. The present CeO _x-based device shows excellent bipolar resistive switching characteristics, including a low operation current (100 μA), high ON/OFF resistance ratio (∼10⁵), and good retention/stress characteristics at both room temperature and 85 °C.

原文	English
文章編號	060303
頁數	4
期刊	Japanese journal of applied physics
卷	53
發行號	6
DOIs	https://doi.org/10.7567/JJAP.53.060303
出版狀態	Published - 5月 2014

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@article{17a04e7cc2164cbab103b680b5883a97,

title = "Resistive switching characteristics of Pt/CeOx/TiN memory device",

abstract = "The resistive switching characteristics of Pt/CeOx/TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory (RRAM). The X-ray diffraction characteristics of the sputtered CeOx layer indicate the formation of nanocrystalline single-phase CeO2 with a cubic fluorite structure. The existence of oxygen vacancies in the Pt/CeOx/TiN memory device was determined by X-ray photoelectron spectroscopic studies, while the presence of an interfacial layer between CeOx and the TiN bottom electrode was investigated by Xray diffraction and high resolution transmission electron microscopy. The TiON layer formed at the TiN/CeOx interface seems to play a key role in the resistive switching mechanism of the device. The present CeO x-based device shows excellent bipolar resistive switching characteristics, including a low operation current (100 μA), high ON/OFF resistance ratio (∼105), and good retention/stress characteristics at both room temperature and 85 °C.",

author = "Muhammad Ismail and Ijaz Talib and Huang, {Chun Yang} and Hung, {Chung Jung} and Tsai, {Tsung Ling} and Jieng, {Jheng Hong} and Umesh Chand and Lin, {Chun An} and Ejaz Ahmed and Rana, {Anwar Manzoor} and Nadeem, {Muhammad Younus} and Tseung-Yuen Tseng",

year = "2014",

month = may,

doi = "10.7567/JJAP.53.060303",

language = "English",

volume = "53",

journal = "Japanese journal of applied physics",

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publisher = "Japan Society of Applied Physics",

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T1 - Resistive switching characteristics of Pt/CeOx/TiN memory device

AU - Ismail, Muhammad

AU - Talib, Ijaz

AU - Huang, Chun Yang

AU - Hung, Chung Jung

AU - Tsai, Tsung Ling

AU - Jieng, Jheng Hong

AU - Chand, Umesh

AU - Lin, Chun An

AU - Ahmed, Ejaz

AU - Rana, Anwar Manzoor

AU - Nadeem, Muhammad Younus

AU - Tseng, Tseung-Yuen

PY - 2014/5

Y1 - 2014/5

N2 - The resistive switching characteristics of Pt/CeOx/TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory (RRAM). The X-ray diffraction characteristics of the sputtered CeOx layer indicate the formation of nanocrystalline single-phase CeO2 with a cubic fluorite structure. The existence of oxygen vacancies in the Pt/CeOx/TiN memory device was determined by X-ray photoelectron spectroscopic studies, while the presence of an interfacial layer between CeOx and the TiN bottom electrode was investigated by Xray diffraction and high resolution transmission electron microscopy. The TiON layer formed at the TiN/CeOx interface seems to play a key role in the resistive switching mechanism of the device. The present CeO x-based device shows excellent bipolar resistive switching characteristics, including a low operation current (100 μA), high ON/OFF resistance ratio (∼105), and good retention/stress characteristics at both room temperature and 85 °C.

AB - The resistive switching characteristics of Pt/CeOx/TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory (RRAM). The X-ray diffraction characteristics of the sputtered CeOx layer indicate the formation of nanocrystalline single-phase CeO2 with a cubic fluorite structure. The existence of oxygen vacancies in the Pt/CeOx/TiN memory device was determined by X-ray photoelectron spectroscopic studies, while the presence of an interfacial layer between CeOx and the TiN bottom electrode was investigated by Xray diffraction and high resolution transmission electron microscopy. The TiON layer formed at the TiN/CeOx interface seems to play a key role in the resistive switching mechanism of the device. The present CeO x-based device shows excellent bipolar resistive switching characteristics, including a low operation current (100 μA), high ON/OFF resistance ratio (∼105), and good retention/stress characteristics at both room temperature and 85 °C.

UR - http://www.scopus.com/inward/record.url?scp=84903157332&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.060303

DO - 10.7567/JJAP.53.060303

M3 - Article

AN - SCOPUS:84903157332

SN - 0021-4922

VL - 53

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 6

M1 - 060303

ER -

Resistive switching characteristics of Pt/CeOx/TiN memory device

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Resistive switching characteristics of Pt/CeO_x/TiN memory device