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Resistive Switching Characteristics and Reliability of SiN
x
-Based Conductive Bridge Random Access Memory
Chun An Lin, Guang Jyun Dai, Tseung-Yuen Tseng
*
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電子研究所
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引文 斯高帕斯(Scopus)
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x
-Based Conductive Bridge Random Access Memory」主題。共同形成了獨特的指紋。
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Keyphrases
Top Electrode
100%
Resistive Switching
100%
SiNx
100%
Conductive Bridging Random Access Memory (CBRAM)
100%
Switching Reliability
100%
Electrode Device
75%
High Temperature
25%
Physical Model
25%
High Density
25%
Binding Energy
25%
Resistive Random Access Memory (ReRAM)
25%
Reset Process
25%
Memory Application
25%
Non-volatile Memory
25%
Long-term Retention
25%
Bipolar Resistive Switching
25%
X-ray Photoelectron Spectroscopy Analysis
25%
Switching Properties
25%
Thermal Dissolution
25%
Dissolution Mechanism
25%
Engineering
Conductive
100%
Resistive
100%
Random Access Memory
100%
Ray Photoelectron Spectroscopy
33%
Reset Process
33%
Set Process
33%
Nonvolatile Memory
33%
Physical Model
33%
Binding Energy
33%
Material Science
Density
100%
X-Ray Photoelectron Spectroscopy
100%