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Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
Pragya Singh, Firman Mangasa Simanjuntak, Amit Kumar, Tseung-Yuen Tseng
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電子研究所
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引文 斯高帕斯(Scopus)
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Keyphrases
Resistive Switching
100%
Nanostructured ZnO Films
100%
Doped ZnO Nanorods
100%
Ga-doped ZnO
100%
Conductive Bridging Random Access Memory (CBRAM)
100%
ZnO Nanorods
75%
Low Resistance State
50%
High Resistance State
50%
Ga Dopant
50%
Diffusion Path
25%
Glass Substrate
25%
Doped Device
25%
Device Structure
25%
Indium Tin Oxide Glass
25%
Well-aligned
25%
Conductive Bridge
25%
Resistive Random Access Memory (ReRAM)
25%
Conducting Bridges
25%
Memory Application
25%
Cu(II) Ions
25%
Ga Doping
25%
Hydrothermal Process
25%
Glass Device
25%
Transparent Glass
25%
Switching Distribution
25%
Material Science
Nanorod
100%
ZnO
100%
Conductive Film
100%
Doping (Additives)
40%
Film
40%
ITO Glass
20%
Copper Ion
20%
Resistive Random-Access Memory
20%