Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

Hong Yu Chen*, Stefano Brivio, Che Chia Chang, Jacopo Frascaroli, Tuo-Hung Hou, Boris Hudec, Ming Liu, Hangbing Lv, Gabriel Molas, Joon Sohn, Sabina Spiga, V. Mani Teja, Elisa Vianello, H. S.Philip Wong

*此作品的通信作者

研究成果: Article同行評審

58 引文 斯高帕斯(Scopus)

摘要

Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced.

原文English
頁(從 - 到)21-38
頁數18
期刊Journal of Electroceramics
39
發行號1-4
DOIs
出版狀態Published - 1 12月 2017

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