TY - JOUR
T1 - Resistive random access memory (RRAM) technology
T2 - From material, device, selector, 3D integration to bottom-up fabrication
AU - Chen, Hong Yu
AU - Brivio, Stefano
AU - Chang, Che Chia
AU - Frascaroli, Jacopo
AU - Hou, Tuo-Hung
AU - Hudec, Boris
AU - Liu, Ming
AU - Lv, Hangbing
AU - Molas, Gabriel
AU - Sohn, Joon
AU - Spiga, Sabina
AU - Teja, V. Mani
AU - Vianello, Elisa
AU - Wong, H. S.Philip
PY - 2017/12/1
Y1 - 2017/12/1
N2 - Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced.
AB - Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced.
KW - 3D integration
KW - Bottom-up fabrication
KW - Resistive random access memory (RRAM)
KW - Resistive switching device
KW - Selector
UR - http://www.scopus.com/inward/record.url?scp=85021188975&partnerID=8YFLogxK
U2 - 10.1007/s10832-017-0095-9
DO - 10.1007/s10832-017-0095-9
M3 - Article
AN - SCOPUS:85021188975
SN - 1385-3449
VL - 39
SP - 21
EP - 38
JO - Journal of Electroceramics
JF - Journal of Electroceramics
IS - 1-4
ER -