摘要
SiF2 has been detected by resonance-enhanced multiphoton ionization mass spectrometry. Two new absorptions have been observed at 481.30 and 379.94 nm and assigned as the (3+1) photoionization via the B̃ 1B2 state and the (1+3) absorption via the ã 3B1 state. A third absorption is observed between 390 and 430 nm which cannot be assigned to any known electronic states of SiF2. Most likely, this is a (3+1) photoionization via a Rydberg state. SiF2 radicals were produced by the reaction of SiF3H with F atoms and by the reaction of F2 with heated silicon crystals under single gas-surface collision conditions.
原文 | English |
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頁(從 - 到) | 165-170 |
頁數 | 6 |
期刊 | Chemical Physics Letters |
卷 | 150 |
發行號 | 1-2 |
DOIs | |
出版狀態 | Published - 9 9月 1988 |