REMPI/MS detection of SiF2 radicals by (3+1) and (1+3) photoionization

J. S. Horwitz*, C. S. Dulcey, Ming-Chang Lin

*此作品的通信作者

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7 引文 斯高帕斯(Scopus)

摘要

SiF2 has been detected by resonance-enhanced multiphoton ionization mass spectrometry. Two new absorptions have been observed at 481.30 and 379.94 nm and assigned as the (3+1) photoionization via the B̃ 1B2 state and the (1+3) absorption via the ã 3B1 state. A third absorption is observed between 390 and 430 nm which cannot be assigned to any known electronic states of SiF2. Most likely, this is a (3+1) photoionization via a Rydberg state. SiF2 radicals were produced by the reaction of SiF3H with F atoms and by the reaction of F2 with heated silicon crystals under single gas-surface collision conditions.

原文English
頁(從 - 到)165-170
頁數6
期刊Chemical Physics Letters
150
發行號1-2
DOIs
出版狀態Published - 9 9月 1988

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