Remote Plasma-Enhanced Atomic Layer Deposition (RPEALD) Nitride/Oxide Gate Dielectric for Sub-65nm Low Standby Power CMOS Application

Chi Chun Chen; T. L. Lee; D. Y. Lee; V. S. Chang; Horng-Chih Lin; S. C. Chen; T. Y. Huang; M. S. Liang

doi:10.1109/VLSIT.2003.1221125

Remote Plasma-Enhanced Atomic Layer Deposition (RPEALD) Nitride/Oxide Gate Dielectric for Sub-65nm Low Standby Power CMOS Application

Chi Chun Chen, T. L. Lee, D. Y. Lee, V. S. Chang, Horng-Chih Lin, S. C. Chen, T. Y. Huang, M. S. Liang

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1 引文斯高帕斯（Scopus）

摘要

A novel remote plasma-enhanced atomic layer deposition (RPEALD) silicon nitride technology is developed in a production-worthy tool for nitride/oxide (N/O) stack gate dielectric. Ultrathin N/O stack (EOT∼13Å) is realized with 50X gate leakage current reduction over thermal oxides. In addition to drastic gate current reduction, devices with RPEALD N/O stack and plasma-nitrided base oxide also exhibit well-behaved device performance and superior reliability characteristics (Qbd, TDDB, NBTI), very promising for sub-65nm low power CMOS applications.

原文	English
頁（從 - 到）	141-142
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2003.1221125
出版狀態	Published - 1 10月 2003
事件	2003 Symposium on VLSI Technology - Kyoto, 日本持續時間: 10 6月 2003 → 12 6月 2003

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10.1109/VLSIT.2003.1221125

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@article{1a68b4700ea1405c8426927452b78035,

title = "Remote Plasma-Enhanced Atomic Layer Deposition (RPEALD) Nitride/Oxide Gate Dielectric for Sub-65nm Low Standby Power CMOS Application",

abstract = "A novel remote plasma-enhanced atomic layer deposition (RPEALD) silicon nitride technology is developed in a production-worthy tool for nitride/oxide (N/O) stack gate dielectric. Ultrathin N/O stack (EOT∼13{\AA}) is realized with 50X gate leakage current reduction over thermal oxides. In addition to drastic gate current reduction, devices with RPEALD N/O stack and plasma-nitrided base oxide also exhibit well-behaved device performance and superior reliability characteristics (Qbd, TDDB, NBTI), very promising for sub-65nm low power CMOS applications.",

keywords = "Gate Dielectric, Low Power CMOS, Nitride/Oxide Stack, RPEALD, Reliability",

author = "Chen, {Chi Chun} and Lee, {T. L.} and Lee, {D. Y.} and Chang, {V. S.} and Horng-Chih Lin and Chen, {S. C.} and Huang, {T. Y.} and Liang, {M. S.}",

year = "2003",

month = oct,

day = "1",

doi = "10.1109/VLSIT.2003.1221125",

language = "English",

pages = "141--142",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 Symposium on VLSI Technology ; Conference date: 10-06-2003 Through 12-06-2003",

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T1 - Remote Plasma-Enhanced Atomic Layer Deposition (RPEALD) Nitride/Oxide Gate Dielectric for Sub-65nm Low Standby Power CMOS Application

AU - Chen, Chi Chun

AU - Lee, T. L.

AU - Lee, D. Y.

AU - Chang, V. S.

AU - Lin, Horng-Chih

AU - Chen, S. C.

AU - Huang, T. Y.

AU - Liang, M. S.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - A novel remote plasma-enhanced atomic layer deposition (RPEALD) silicon nitride technology is developed in a production-worthy tool for nitride/oxide (N/O) stack gate dielectric. Ultrathin N/O stack (EOT∼13Å) is realized with 50X gate leakage current reduction over thermal oxides. In addition to drastic gate current reduction, devices with RPEALD N/O stack and plasma-nitrided base oxide also exhibit well-behaved device performance and superior reliability characteristics (Qbd, TDDB, NBTI), very promising for sub-65nm low power CMOS applications.

AB - A novel remote plasma-enhanced atomic layer deposition (RPEALD) silicon nitride technology is developed in a production-worthy tool for nitride/oxide (N/O) stack gate dielectric. Ultrathin N/O stack (EOT∼13Å) is realized with 50X gate leakage current reduction over thermal oxides. In addition to drastic gate current reduction, devices with RPEALD N/O stack and plasma-nitrided base oxide also exhibit well-behaved device performance and superior reliability characteristics (Qbd, TDDB, NBTI), very promising for sub-65nm low power CMOS applications.

KW - Gate Dielectric

KW - Low Power CMOS

KW - Nitride/Oxide Stack

KW - RPEALD

KW - Reliability

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U2 - 10.1109/VLSIT.2003.1221125

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M3 - Conference article

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SN - 0743-1562

SP - 141

EP - 142

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 2003 Symposium on VLSI Technology

Y2 - 10 June 2003 through 12 June 2003

ER -

Remote Plasma-Enhanced Atomic Layer Deposition (RPEALD) Nitride/Oxide Gate Dielectric for Sub-65nm Low Standby Power CMOS Application

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