Remote Plasma-Enhanced Atomic Layer Deposition (RPEALD) Nitride/Oxide Gate Dielectric for Sub-65nm Low Standby Power CMOS Application

Chi Chun Chen, T. L. Lee, D. Y. Lee, V. S. Chang, Horng-Chih Lin, S. C. Chen, T. Y. Huang, M. S. Liang

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A novel remote plasma-enhanced atomic layer deposition (RPEALD) silicon nitride technology is developed in a production-worthy tool for nitride/oxide (N/O) stack gate dielectric. Ultrathin N/O stack (EOT∼13Å) is realized with 50X gate leakage current reduction over thermal oxides. In addition to drastic gate current reduction, devices with RPEALD N/O stack and plasma-nitrided base oxide also exhibit well-behaved device performance and superior reliability characteristics (Qbd, TDDB, NBTI), very promising for sub-65nm low power CMOS applications.

原文English
頁(從 - 到)141-142
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
DOIs
出版狀態Published - 1 10月 2003
事件2003 Symposium on VLSI Technology - Kyoto, Japan
持續時間: 10 6月 200312 6月 2003

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